SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

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80 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified according t

文件：239.72 Kbytes 页数：12 Pages

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80 V, 1 A PNP power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：238.53 Kbytes 页数：12 Pages

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80 V, 1 A NPN power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：239.42 Kbytes 页数：12 Pages

NEXPERIA

安世