80 V, 1 A PNP power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：238.53 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：A7；Package：SC-62；80 V, 1 A NPN power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：239.42 Kbytes 页数：12 Pages

NEXPERIA

安世

80 V, 1 A NPN power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：239.42 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：BH；Package：SOT-89；NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89

Features • BVCEO > 45V, 60V & 80V • Ic = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • Low Saturation Voltage VCE(sat)

文件：146.44 Kbytes 页数：7 Pages

DIODES

美台半导体

Discrete and MOSFET components, analog & logic ICs

文件：11.62183 Mbytes 页数：234 Pages

NEXPERIA

安世

80 V, 1 A NPN power bipolar transistors

NPN power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package.\nTable 1. Product overview Type number\n Package\n NPN complement\n Nexperia\n JEITA\n JEDEC\n BCX56T\n SOT89\n SC-62\n TO-243\n BCX53T\n BCX56-10T\n BCX53-10 • High collector current capability IC and ICM\n• Three current gain selections\n• High power dissipation capability\n• AEC-Q101 qualified;

Nexperia

安世

Package：TO-243AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 80V 1A SOT89-3

DIODES

美台半导体

Package：TO-243AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 80V 1A SOT89

Nexperia USA Inc.

Package：TO-243AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 80V 1A SOT89

Nexperia USA Inc.