NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > 45V, 60V & 80V • IC = 1A High Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

文件：131.1 Kbytes 页数：7 Pages

DIODES

美台半导体

Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 45V 1A SOT223-3

DIODES

美台半导体

Silicon Controlled Rectifier (SCR) 4 Amp, Sensitive Gate

Description: The NTE5411 through NTE5416 are PNPN silicon controlled rectifier (SCR) devices designed for high volume consumer applications such as temperature, light, and speed control: process and remote control, and warning systems where reliability of operation is important. Features:

文件：21.91 Kbytes 页数：3 Pages

NTE

PNP high-voltage transistor

DESCRIPTION PNP high-voltage transistor in a TO-92; SOT54 plastic package. FEATURES • High current (max. 1 A) • High voltage (max. 300 V). APPLICATIONS • Telephony applications.

文件：50.41 Kbytes 页数：8 Pages

PHI

PHI

HEX INVERTER BUFFERS/DRIVERS WITH OPEN-COLLECTOR HIGH-VOLTAGE OUTPUTS

文件：140.94 Kbytes 页数：7 Pages

TI

德州仪器