PNP Silicon AF Transistors (For AF driver and output stages High collector current)

PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP 54 … BCP 56 (NPN)

文件：140.02 Kbytes 页数：5 Pages

SIEMENS

西门子

PNP Plastic-Encapsulate Transistors

Features • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54 ... BCP56 (NPN) • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability

文件：455.41 Kbytes 页数：5 Pages

MCC

60 V, 1 A NPN medium power transistors

Features and benefits • High current • Three current gain selections • High power dissipation capability

文件：247.82 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：BCP52/16；Package：SC-73；60 V, 1 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

文件：1.74331 Mbytes 页数：22 Pages

NEXPERIA

安世

丝印：BCP52-16；Package：SOT223；PNP Silicon Epitaxial Planar Transistor

Features ® High Collector Current ® Low Collector-emitter Saturation Voltage

文件：1.31187 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

LOW POWER PNP TRANSISTOR

LOW POWER PNP TRANSISTOR ■ SILICON EPITAXIAL PLANAR PNP MEDIUM VOLTAGE TRANSISTOR ■ SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS ■ TAPE AND REEL PACKING ■ THE NPN COMPLEMENTARY TYPE IS BCP55-16 APPLICATIONS ■ MEDIUM VOLTAGE LOAD SWITCH TRANSISTORS ■ OUTPUT STAGE FOR AUDIO AMPLIFIER

文件：48.92 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

60 V, 1 A NPN medium power transistors

Features and benefits • High current • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in automotive applications

文件：247.94 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：P5216T；Package：SOT223；60 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：273.32 Kbytes 页数：14 Pages

NEXPERIA

安世

60 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：274.26 Kbytes 页数：14 Pages

NEXPERIA

安世

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > -45V, -60V & -80V • IC = -1A High Continuous Collector Current • ICM = -2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

文件：116.75 Kbytes 页数：7 Pages

DIODES

美台半导体