60 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：273.32 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：P5510T；Package：SOT223；60 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：274.26 Kbytes 页数：14 Pages

NEXPERIA

安世

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > 45V, 60V & 80V • IC = 1A High Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

文件：131.1 Kbytes 页数：7 Pages

DIODES

美台半导体

1A , 60V NPN Silicon Medium Power Transistor

FEATURES • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage

文件：489.81 Kbytes 页数：2 Pages

SECOS

喜可士

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

●For AF driver and output stages ●High collector current ●Low collector-emitter saturation voltage ●Complementary types: BCP 51 … BCP 53 (PNP)

文件：131.42 Kbytes 页数：5 Pages

SIEMENS

西门子

NPN medium power transistors

DESCRIPTION NPN medium power transistor in a SOT223 plastic package. PNP complements: BCP51, BCP52 and BCP53. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Switching.

文件：43.44 Kbytes 页数：8 Pages

PHI

PHI

NPN Silicon AF Transistors

NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP51 ... BCP53 (PNP)

文件：48.04 Kbytes 页数：5 Pages

INFINEON

英飞凌

丝印：BCP55/16；Package：SOT223；60 V, 1 A NPN medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

文件：1.98381 Mbytes 页数：22 Pages

NEXPERIA

安世

丝印：BCP55-16；Package：SOT223；NPN Silicon Epitaxial Planar Transistor

Features High Collector Current Low Collector-emitter Saturation Voltage

文件：1.70594 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：BCP55/16；Package：SOT223；60 V, 1 A NPN medium power transistors

Features and benefits • High current • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in automotive applications

文件：247.94 Kbytes 页数：12 Pages

NEXPERIA

安世