Dual General Purpose Transistors

Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compli

文件：178.77 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

PNP general purpose transistors

DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

文件：40.8 Kbytes 页数：8 Pages

PHI

飞利浦

General Purpose Transistor

General Purpose Transistor RoHS Device Halogen Free Features ​​​​​​​- Ideally suited for automatic insertion - Power dissipation PCM: 0.25W (@TA=25°C) - Low current.(max. 100mA) - Collector-base voltage VCBO: BC856 = -80V BC857 = -50V BC858 = -30V

文件：163.09 Kbytes 页数：6 Pages

COMCHIP

典琦

GENERAL PURPOSE TRANSISTORS PNP SILICON

DESCRIPTION The BC856 857 858 859 A L BL/ CL are available in SOT 23 p ackage FEATURES ⚫ Moisture Sensitivity Level: 1 ⚫ ESD Rating Human Body Model: >4000 V Machine Model: >400 V ⚫ Availabl e in SOT 23 p ackage

文件：830.81 Kbytes 页数：9 Pages

AITSEMI

创瑞科技

General Purpose Transistors

General Purpose Transistors PNP Silicon Features • Pb−Free Packages are Available

文件：109.14 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

General Purpose Transistors(PNP Silicon)

General Purpose Transistors PNP Silicon

文件：211.86 Kbytes 页数：5 Pages

LRC

乐山无线电

CASE 318-08, STYLE 6 SOT-23 (TO-236AB)

General Purpose Transistors PNP Silicon

文件：249.88 Kbytes 页数：8 Pages

Motorola

摩托罗拉

General Purpose Transistors

General Purpose Transistors PNP Silicon Features • Pb−Free Packages are Available

文件：109.14 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

General Purpose Transistors PNP Silicon

General Purpose Transistors PNP Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：172.95 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：3L；Package：SOT-23；General Purpose Transistors

General Purpose Transistors PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.

文件：179.58 Kbytes 页数：8 Pages

FS