Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 30V 0.1A SOT23

TSC

台湾半导体

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics Output Power = 3.

文件：164.3 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics Output Power = 3.

文件：164.3 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Integrated Circuit Dual, Low-Noise JFET-Input Operational Amplifier

Description: The NTE858M and NTE858SM are dual, low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for lo

文件：28.16 Kbytes 页数：3 Pages

NTE