PNP general purpose transistors

DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

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PHI

PHI

PNP Silicon AF Transistor

PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC847BF, BC848BF BC849BF, BC850BF (NPN)

文件：165.44 Kbytes 页数：8 Pages

INFINEON

英飞凌

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics Output Power = 3.

文件：164.3 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics Output Power = 3.

文件：164.3 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Integrated Circuit Dual, Low-Noise JFET-Input Operational Amplifier

Description: The NTE858M and NTE858SM are dual, low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for lo

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NTE