BC857S

Multi-ChipTransistor

Features PowerdissipationPCM:0.3W(Tamp.=25°C) CollectorcurrentICM:-0.2A Collector-basevoltageV(BR)CBO:-50V Operating&StoragejunctionTemperatureTj,Tstg:-55°C~+150°C

BC857S

PNPPlastic-EncapsulateTransistors300mW

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •Multi-chipTransistor •Ultra-SmallSurfaceMountPackage •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityL

BC857S

Multi-ChipTRANSISTOR(PNP)

FEATURES PowerdissipationPCM:300mW(Tamb=25℃) CollectorcurrentICM:-200mA Collector-basevoltageV(BR)CBO:-50V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

BC857S

DualPNPSmallSignalSurfaceMountTransistor

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryNPNtypeavailableBC847S. ●Ultra-smallsurfacemountpackage. APPLICATIONS ●ForLowpoweramplificationandswitching.

BC857S

PNPTransistors

■Features ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●ForAFinputstagesanddriverapplications

BC857S

PNPSiliconAFTransistorArrays

BC857S

SMDGeneralPurposePNPTransistors

BC857S

DUALTRANSISTOR(PNPPNP)

DUALTRANSISTOR(PNP+PNP) FEATURES ●Twotransistorsinonepackage ●Reducesnumberofcomponentsandboardspace ●Nomutualinterferencebetweenthetransistors

BC857S

SMDGeneralPurposePNPTransistors

BC857S

Powerdissipation,plasticcase,Weightapprox

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation300mW •PlasticcaseSOT-363 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled