BC857U

Generalpurposeapplication

Descriptions •Generalpurposeapplication •Switchingapplication Features •Highvoltage:VCEO=-45V •ComplementarypairwithBC847U

BC857U

GeneralPurposeTransistor

GeneralPurposeTransistor PNPSilicon Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–323/SC–70whichisdesignedforlowpowersurfacemountapplications. Features Wedeclarethatthematerialofproductcompliancewith RoHSrequir

BC857UF

PNPSiliconTransistor(GeneralpurposeapplicationSwitchingapplication)

Descriptions •Generalpurposeapplication •Switchingapplication Features •Highvoltage:VCEO=-45V •ComplementarypairwithBC847UF

BC857UF

PNPSiliconTransistor

Descriptions •Generalpurposeapplication •Switchingapplication Features •Highvoltage:VCEO=-45V •ComplementarypairwithBC847UF

BC857V

Ideallysuitedforautomaticinsertion

BC857W

PNPSiliconAFTransistors

•ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC846W,BC847W,BC848W,BC849W,BC850W(NPN)

BC857W

EPITAXIALPLANARPNPTRANSISTOR(GENERALPURPOSE,SWITCHING)

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •ForComplementaryWithNPNTypeBC846W/847W/848W

BC857W

PNPgeneralpurposetransistors

DESCRIPTION PNPtransistorinaplasticSOT323package. NPNcomplements:BC846WandBC847W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.80) •S-minipackage. APPLICATIONS •Generalpurposeswitchingandamplification.

BC857W

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BC857W

45V,100mANPNgeneral-purposetransistors

DESCRIPTION NPNtransistorinaSOT23plasticpackage.PNPcomplements:BC856,BC857andBC858. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification.