PNP GENERAL PURPOSE DUALTRANSISTORS

VOLTAGE 45 Volts POWER 150 mWatts FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • In compliance with EU RoHS 2002/95/EC directives

文件：160.57 Kbytes 页数：4 Pages

PANJIT

強茂

丝印：3F；Package：SOT-363；Dual PNP Small Signal Transistor

Features ● Epoxy meets UL-94 V-0 flammability rating ● Surface mount package ideally Suited for Automatic Insertion ● PNP Mechanical Data ● Package: SOT-363 ● Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 ● Marking: 3F

文件：613.99 Kbytes 页数：5 Pages

YANGJIE

扬杰电子

丝印：3F；Package：TSSOP6；nullPNP general purpose double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and boardspace • No mutual interference between the transistors

文件：236.72 Kbytes 页数：12 Pages

NEXPERIA

安世

PNP/PNP matched double transistors

Features * Current gain matching * Base-emitter voltage matching * Drop-in replacement for standard double transistors

文件：2.39367 Mbytes 页数：15 Pages

NEXPERIA

安世

Dual PNP Small Signal Surface Mount Transistor

Features Epitaxial planar die construction © Complementary NPN type available BC847S © Utra-small surface mount package

文件：1.29005 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features • Ultra-Small Surface Mount Package • Ideally Suited for Automated Insertion • For switching and AF Amplifier Application • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. Green Device (Note 3) • Qualified to AEC-Q101 Standards for High Re

文件：352.04 Kbytes 页数：3 Pages

DIODES

美台半导体

丝印：7D；Package：TSSOP6；45 V, 100 mA PNP/PNP general-purpose double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and board space • No mutual interference between the transistors • High-temperature applications up to 175 °C

文件：230.92 Kbytes 页数：1 Pages

NEXPERIA

安世

丝印：7D；Package：TSSOP6；45 V, 100 mA PNP/PNP general-purpose double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and board space • No mutual interference between the transistors • High-temperature applications up to 175 °C • Qualified according to A

文件：235.86 Kbytes 页数：10 Pages

NEXPERIA

安世

丝印：3F；Package：TSSOP6；PNP general purpose double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and boardspace • No mutual interference between the transistors • Qualified according to AEC-Q101 and recommended for use in automotive a

文件：238.91 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：3F；Package：SC-75；PNP general purpose transistors

FEATURES •Low current (max. 100 mA) •Low voltage (max. 65 V). APPLICATIONS •General purpose switching and amplification, especially in portable equipment. DESCRIPTION PNP transistor in an SC-75 (SOT416) plastic package. NPN complements: BC846T; BC847T series.

文件：352.2 Kbytes 页数：10 Pages

NEXPERIA

安世