丝印：3F；Package：TSSOP6；PNP general purpose double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and boardspace • No mutual interference between the transistors • Qualified according to AEC-Q101 and recommended for use in automotive a

文件：238.91 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PNP general purpose double transistor

PNP general-purpose double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN complement: BC847BS-Q. • Low collector capacitance\n• Low collector-emitter saturation voltage\n• Closely matched current gain\n• Reduces number of components and boardspace\n• No mutual interference between the transistors\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

Package：6-TSSOP，SC-88，SOT-363；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 45V 0.1A 6TSSOP

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Package：6-TSSOP，SC-88，SOT-363；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 45V 0.1A 6TSSOP

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司