PNP Silicon AF Transistor

PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC847BF, BC848BF BC849BF, BC850BF (NPN)

文件：165.44 Kbytes 页数：8 Pages

INFINEON

英飞凌

45V PNP SMALL SIGNAL TRANSISTOR IN DFN0606

Features BVCEO > -45V IC = -100mA High Collector Current PD = 925mW Power Dissipation 0.36mm2 Package Footprint, 40 Smaller than DFN1006 0.4mm Height Package Minimizing Off-Board Profile Complementary NPN Type BC847BFZ Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Anti

文件：479.92 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：3W；Package：X2-DFN0606-3；45V PNP SMALL SIGNAL TRANSISTOR IN DFN0606

Features BVCEO > -45V IC = -100mA High Collector Current PD = 925mW Power Dissipation 0.36mm2 Package Footprint, 40 Smaller than DFN1006 0.4mm Height Package Minimizing Off-Board Profile Complementary NPN Type BC847BFZ Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Anti

文件：479.92 Kbytes 页数：7 Pages

DIODES

美台半导体

General Purpose Transistor

General Purpose Transistor RoHS Device Halogen Free Features ​​​​​​​- Ideally suited for automatic insertion - Power dissipation PCM: 0.25W (@TA=25°C) - Low current.(max. 100mA) - Collector-base voltage VCBO: BC856 = -80V BC857 = -50V BC858 = -30V

文件：163.09 Kbytes 页数：6 Pages

COMCHIP

典琦

丝印：G3F；Package：SOT-23；PNP General purpose transistor

Features 1) BVCEO>45V(IC=1mA) 2) Complements the BC847B HZG Application AUDIO FREQUENCY SMALL SIGNAL AMPLIFIER

文件：1.37804 Mbytes 页数：8 Pages

ROHM

罗姆

GENERAL PURPOSE TRANSISTORS PNP SILICON

DESCRIPTION The BC856 857 858 859 A L BL/ CL are available in SOT 23 p ackage FEATURES ⚫ Moisture Sensitivity Level: 1 ⚫ ESD Rating Human Body Model: >4000 V Machine Model: >400 V ⚫ Availabl e in SOT 23 p ackage

文件：830.81 Kbytes 页数：9 Pages

AITSEMI

创瑞科技

丝印：3F；Package：TSLP-3-1；PNP Silicon AF Transistors

PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846...-BC850... (NPN) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

文件：136.98 Kbytes 页数：5 Pages

INFINEON

英飞凌

丝印：3F；Package：TSLP-3-1；PNP Silicon AF Transistor

PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC847...-BC850... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)

文件：866.73 Kbytes 页数：11 Pages

INFINEON

英飞凌

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • BVCEO > -45V • IC = -100mA High Collector Current • PD = 1000mW Power Dissipation • 0.60mm2 Package Footprint, 13 times Smaller than SOT23 • 0.5mm Height Package Minimizing Off-Board Profile • Complementary NPN Type BC847BLP • Totally Lead-Free & Fully RoHS Compliant (Notes 1

文件：262.65 Kbytes 页数：4 Pages

DIODES

美台半导体

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • BVCEO > -45V • IC = -100mA High Collector Current • PD = 1000mW Power Dissipation • 0.60mm2 Package Footprint, 13 times Smaller than SOT23 • 0.4mm Height Package Minimizing Off-Board Profile • Complementary NPN Type BC847BLP4 • Totally Lead-Free & Fully RoHS Compliant (Notes

文件：133.38 Kbytes 页数：4 Pages

DIODES

美台半导体