首页 >BC849R>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SurfaceMountGeneralPurposeSi-Epi-PlanarDouble-Transistors | Diotec Diotec Semiconductor | Diotec | ||
SMDGeneralPurposeDualNPNTransistors | Diotec Diotec Semiconductor | Diotec | ||
GeneralPurposeTransistors GeneralPurposeTransistors NPNSilicon •MoistureSensitivityLevel:1 •ESDRating–HumanBodyModel:>4000V –MachineModel:>400V | FS First Silicon Co., Ltd | FS | ||
GeneralPurposeTransistors GeneralPurposeTransistors NPNSilicon •MoistureSensitivityLevel:1 •ESDRating–HumanBodyModel:>4000V –MachineModel:>400V | FS First Silicon Co., Ltd | FS | ||
NPNSiliconAFTransistors NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes: BC856T,BC857T, BC858T,BC859T,BC860T | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
NPNGENERALPURPOSETRANSISTORS | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors | Diotec Diotec Semiconductor | Diotec | ||
NPNSiliconAFTransistors NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC856W,BC857W,BC858W,BC859W,BC860W(PNP) | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
SurfacemountSi-EpitaxialPlanarTransistors SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | Diotec Diotec Semiconductor | Diotec | ||
NPNgeneralpurposetransistors DESCRIPTION NPNtransistorinaSOT323plasticpackage. PNPcomplements:BC859WandBC860W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment. | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips |
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