Dual General Purpose Transistors

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qu

文件：172.75 Kbytes 页数：17 Pages

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安森美半导体

Dual General Purpose Transistors

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qu

文件：142.58 Kbytes 页数：17 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistors

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qu

文件：178.93 Kbytes 页数：17 Pages

ONSEMI

安森美半导体

65 V, 100 mA NPN/PNP general-purpose transistor

General description NPN/NPN general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Features ■ Low collector capacitance ■ Low collector-emitter saturation voltage ■ Closely matched current gain ■ Reduces number of components and board spac

文件：137.04 Kbytes 页数：15 Pages

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丝印：PJ；Package：TSSOP6；65 V, 100 mA NPN/PNP general-purpose transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and board space • No mutual interference between the transistors

文件：303.65 Kbytes 页数：12 Pages

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安世

丝印：7H；Package：TSSOP6；65 V, 100 mA NPN/PNP general-purpose double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and board space • No mutual interference between the transistors • High-temperature applications up to 175 °C

文件：267.1 Kbytes 页数：12 Pages

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安世

丝印：7H；Package：TSSOP6；65 V, 100 mA NPN/PNP general-purpose double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and board space • No mutual interference between the transistors • High-temperature applications up to 175 °C • Qualified according to A

文件：268.23 Kbytes 页数：12 Pages

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安世

丝印：PJ；Package：TSSOP6；65 V, 100 mA NPN/PNP general-purpose transistor

1. General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: BC846BS-Q PNP/PNP complement: BC856BS-Q 2. Features and benefits • Low collector capacitance • Low collector-emitter saturation v

文件：289.42 Kbytes 页数：13 Pages

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丝印：1B；Package：SOT23；65 V, 100 mA NPN general-purpose transistors

Features and benefits • General-purpose transistors • SMD plastic packages • Two different gain selections • Qualified according to AEC-Q101 and recommended for use in automotive applications

文件：222.98 Kbytes 页数：11 Pages

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丝印：F3；Package：SOT8015；65 V, 100 mA NPN general-purpose transistor

Features and benefits • High power dissipation capability • Suitable for Automatic Optical Inspection (AOI) of solder joint • Smaller footprint compared to conventional leaded SMD packages • Low package height of 0.5 mm

文件：229.4 Kbytes 页数：12 Pages

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