BC635NPN

SILICON PLANAR EPITAXIAL TRANSISTORS

SILICONPLANAREPITAXIALTRANSISTORS HighCurrentTransistor

BC636

High Current Transistors

HighCurrentTransistorsPNPSilicon

BC636

High Current Transistors(PNP Silicon)

HighCurrentTransistorsPNPSilicon

BC636

PNP medium power transistors

DESCRIPTION PNPmediumpowertransistorinaTO-92;SOT54plasticpackage.NPcomplements:BC635,BC637andBC639. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V). APPLICATIONS •Audioandvideoamplifiers.

BC636

PNP Silicon AF Transistors (High current gain High collector current)

PNPSiliconAFTransistors ●Highcurrentgain ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC635,BC637,BC639(NPN)

BC636

COMPLEMENTARY SILICON TRANSISTORS

BC636

PNP Type Plastic Encapsulate Transistors

FEATURE PowerDissipation:PCM:0.83mW(Tamb=25°C)

BC636

PNP EPITAXIAL SILICON TRANSISTOR

SWITCHINGANDAMPLIFIERAPPLICATIONS •ComplementtoBC635/637/639

BC636

SILICON PLANAR EPITAXIAL TRANSISTORS

SILICONPLANAREPITAXIALTRANSISTORS HighCurrentTransistor

BC636

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES Highcurrenttransistors