丝印：BC558B；Package：TO-923L；PNP Epitaxial Silicon Transistor

Features • Switching and Amplifier • High-Voltage: BC556, VCEO = -65 V • Low-Noise: BC559, BC560 • Complement to BC546, BC547, BC548, BC549, and BC550

文件：336.46 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：BC558B；Package：TO-923L；PNP Epitaxial Silicon Transistor

Features • Switching and Amplifier • High-Voltage: BC556, VCEO = -65 V • Low-Noise: BC559, BC560 • Complement to BC546, BC547, BC548, BC549, and BC550

文件：336.46 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

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General Purpose PNP Transistors • Power dissipation 500 mW • Plastic case TO-92 • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack

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Diotec

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CDIL

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FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: -0.1 A Collector-base voltage VCBO: BC556 -80 V BC557 -50 V BC558 -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：68.56 Kbytes 页数：1 Pages

WINNERJOIN

永而佳