80 V, 1 A PNP medium power transistors

General description PNP medium power transistor series. Features ■ High current ■ Two current gain selections ■ High power dissipation capability Applications ■ Linear voltage regulators ■ High-side switches ■ MOSFET drivers ■ Amplifiers

文件：1.12225 Mbytes 页数：22 Pages

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丝印：BV；Package：HUSON3；80 V, 1 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

文件：1.83457 Mbytes 页数：22 Pages

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80 V, 1 A PNP medium power transistors

文件：1.12225 Mbytes 页数：22 Pages

恩XP

丝印：BV；Package：SOT1061；80 V, 1 A PNP medium power transistors

1. General description PNP medium power transistors in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High current • Three current gain selections • High power dissipation capability • Exposed heatsink for excellent thermal an

文件：250.7 Kbytes 页数：13 Pages

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丝印：CA；Package：DFN2020D-3；45 V/60 V/80 V, 1 A PNP medium power transistors

General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. Features and benefits ■ High collector current capability IC

文件：903.25 Kbytes 页数：15 Pages

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丝印：CA；Package：DFN2020D-3；80 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Reduced Printed-Circuit Board (PCB) area requirements • Exposed heat sink for excellent thermal and electrical conductivity • Two current gain selections • Leadless very small SMD plastic package with medium power capabili

文件：261.36 Kbytes 页数：11 Pages

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丝印：CA；Package：DFN2020D-3；80 V, 1 A PNP medium power transistors

1. General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. 2. Features and benefits • High collector current capa

文件：261.11 Kbytes 页数：11 Pages

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丝印：G2；Package：DFN2020D-3；80 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • Reduced Printed-Circuit Board (PCB) area requirements • Leadless small SMD plastic package with solderable side pads • Exposed heat sink for excellent thermal and electrical conductivity •

文件：266.42 Kbytes 页数：12 Pages

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80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • Reduced Printed-Circuit Board (PCB) area requirements • Leadless small SMD plastic package with solderable side pads • Exposed heat sink for excellent thermal and electrical conductivity •

文件：263.29 Kbytes 页数：12 Pages

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丝印：G2；Package：DFN2020D-3；80 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • Reduced Printed-Circuit Board (PCB) area requirements • Leadless small SMD plastic package with solderable side pads • Exposed heat sink for excellent thermal and electrical conductivity •

文件：268.81 Kbytes 页数：12 Pages

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