BC53PA

Marking：BV；Package：HUSON3；80 V, 1 A PNP medium power transistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

BC53PA-Q

Marking：BV；Package：SOT1061；80 V, 1 A PNP medium power transistors

1.Generaldescription PNPmediumpowertransistorsinanultrathinSOT1061leadlesssmallSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Highcurrent •Threecurrentgainselections •Highpowerdissipationcapability •Exposedheatsinkforexcellentthermalan

BC53PAS

Marking：CA；Package：DFN2020D-3；45 V/60 V/80 V, 1 A PNP medium power transistors

Generaldescription PNPmediumpowertransistorseriesencapsulatedinanultrathinDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapabilityandvisibleandsolderablesidepads. Featuresandbenefits ■HighcollectorcurrentcapabilityIC

BC53PAS

Marking：CA；Package：DFN2020D-3；80 V, 1 A PNP medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •ReducedPrinted-CircuitBoard(PCB)arearequirements •Exposedheatsinkforexcellentthermalandelectricalconductivity •Twocurrentgainselections •LeadlessverysmallSMDplasticpackagewithmediumpowercapabili

BC53PAS-Q

Marking：CA；Package：DFN2020D-3；80 V, 1 A PNP medium power transistors

1.Generaldescription PNPmediumpowertransistorseriesencapsulatedinanultrathinDFN2020D-3(SOT1061D) leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapabilityand visibleandsolderablesidepads. 2.Featuresandbenefits •Highcollectorcurrentcapa

BC53PAST

Marking：G2；Package：DFN2020D-3；80 V, 1 A PNP medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •ReducedPrinted-CircuitBoard(PCB)arearequirements •LeadlesssmallSMDplasticpackagewithsolderablesidepads •Exposedheatsinkforexcellentthermalandelectricalconductivity •

BC53PAST

80 V, 1 A NPN medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •ReducedPrinted-CircuitBoard(PCB)arearequirements •LeadlesssmallSMDplasticpackagewithsolderablesidepads •Exposedheatsinkforexcellentthermalandelectricalconductivity •

BC53PAST-Q

Marking：G2；Package：DFN2020D-3；80 V, 1 A PNP medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •ReducedPrinted-CircuitBoard(PCB)arearequirements •LeadlesssmallSMDplasticpackagewithsolderablesidepads •Exposedheatsinkforexcellentthermalandelectricalconductivity •

BC53PA,115

Package：3-PowerUDFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 80V 1A 3HUSON

Nexperia USA Inc.

BC53PASX

Package：3-UDFN 裸露焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 80V 1A DFN2020D-3

Nexperia USA Inc.