丝印：CA；Package：DFN2020D-3；45 V/60 V/80 V, 1 A PNP medium power transistors

General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. Features and benefits ■ High collector current capability IC

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丝印：CA；Package：DFN2020D-3；80 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Reduced Printed-Circuit Board (PCB) area requirements • Exposed heat sink for excellent thermal and electrical conductivity • Two current gain selections • Leadless very small SMD plastic package with medium power capabili

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安世安世半导体(中国)有限公司

丝印：CA；Package：DFN2020D-3；80 V, 1 A PNP medium power transistors

1. General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. 2. Features and benefits • High collector current capa

文件：261.11 Kbytes 页数：11 Pages

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安世安世半导体(中国)有限公司

丝印：G2；Package：DFN2020D-3；80 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • Reduced Printed-Circuit Board (PCB) area requirements • Leadless small SMD plastic package with solderable side pads • Exposed heat sink for excellent thermal and electrical conductivity •

文件：266.42 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • Reduced Printed-Circuit Board (PCB) area requirements • Leadless small SMD plastic package with solderable side pads • Exposed heat sink for excellent thermal and electrical conductivity •

文件：263.29 Kbytes 页数：12 Pages

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安世安世半导体(中国)有限公司

丝印：G2；Package：DFN2020D-3；80 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • Reduced Printed-Circuit Board (PCB) area requirements • Leadless small SMD plastic package with solderable side pads • Exposed heat sink for excellent thermal and electrical conductivity •

文件：268.81 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

45 V/60 V/80 V, 1 A PNP medium power transistors

PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads.\nTable 1. Product overview Type number[1]\n Package\n NPN complement\n BC5 • High collector current capability IC and ICM\n• Reduced Printed-Circuit Board (PCB) area requirements\n• Exposed heat sink for excellent thermal and electrical conductivity\n• AEC-Q101 qualified\n• Two current gain selections\n• Leadless very small SMD plastic package with medium power capability\;

Nexperia

安世

80 V, 1 A PNP medium power transistors

PNP medium power transistors in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and Side-Wettable Flanks (SWF).\n Table 1. Product overview Type number\n Package\n NPN complement\n Nexperia\n   BC53PAST\n

Nexperia

安世

80 V, 1 A PNP medium power transistors

PNP medium power transistors in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and Side-Wettable Flanks (SWF).\n Table 1. Product overview Type number\n Package\n NPN complement\n Nexperia\n   BC53PAST-Q

Nexperia

安世

Package：3-UDFN 裸露焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 80V 1A DFN2020D-3

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