CA

型号：74AHC1G00GV；Package：SC-74A；2-input NAND gate

1.Generaldescription The74AHC1G00;74AHCT1G00isasingle2-inputNANDgate.Inputsareovervoltagetolerant. Thisfeatureallowstheuseofthesedevicesastranslatorsinmixedvoltageenvironments. 2.Featuresandbenefits •Widesupplyvoltagerangefrom2.0to5.5V •Overvoltagetole

CA

型号：74AHCT1G00GW；Package：SOT-353；2-input NAND gate

DESCRIPTION The74AHC1G/AHCT1G00isahigh-speedSi-gateCMOSdevice. The74AHC1G/AHCT1G00providesthe2-inputNANDfunction. FEATURES •Symmetricaloutputimpedance •Highnoiseimmunity •ESDprotection: –HBMEIA/JESD22-A114-Aexceeds2000V –MMEIA/JESD22-A115-Aexceeds

PHI

CA

型号：74AHCT1G00GW；Package：SOT-353；2-input NAND gate

Generaldescription 74AHC1G00and74AHCT1G00arehigh-speedSi-gateCMOSdevices.Theyprovidea2-inputNANDfunction. TheAHCdevicehasCMOSinputswitchinglevelsandsupplyvoltagerange2Vto5.5V. TheAHCTdevicehasTTLinputswitchinglevelsandsupplyvoltagerange4.5Vto5.5V.

恩XP

CA

型号：74AHCT1G00GW-Q100；Package：TSSOP5；2-input NAND gate

1.Generaldescription The74AHC1G00-Q100;74AHCT1G00-Q100isasingle2-inputNANDgate.Inputsareovervoltage tolerant.Thisfeatureallowstheuseofthesedevicesastranslatorsinmixedvoltageenvironments. ThisproducthasbeenqualifiedtotheAutomotiveElectronicsCouncil(AEC)stand

CA

型号：74AHCT1G00GW-Q100；Package：SC-74A；2-input NAND gate

1.Generaldescription The74AHC1G00-Q100;74AHCT1G00-Q100isasingle2-inputNANDgate.Inputsareovervoltage tolerant.Thisfeatureallowstheuseofthesedevicesastranslatorsinmixedvoltageenvironments. ThisproducthasbeenqualifiedtotheAutomotiveElectronicsCouncil(AEC)stand

CA

型号：AP2121AJ4-3.3TRG1；Package：CSP-4；HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR

Features ·LowDropoutVoltageatIOUT=100mA:150mV Typical(Except1.2V,1.3Vand1.5VVersions) ·LowStandbyCurrent:0.1μATypical ·LowQuiescentCurrent:25μATypical ·HighRippleRejection:70dBTypical（f=1kHz） ·OutputCurrent:MoreThan200mA(300mA Limit) ·ExtremelyLowNoise:

CA

型号：BC53PAS；Package：DFN2020D-3；80 V, 1 A PNP medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •ReducedPrinted-CircuitBoard(PCB)arearequirements •Exposedheatsinkforexcellentthermalandelectricalconductivity •Twocurrentgainselections •LeadlessverysmallSMDplasticpackagewithmediumpowercapabili

CA

型号：BC53PAS；Package：DFN2020D-3；45 V/60 V/80 V, 1 A PNP medium power transistors

Generaldescription PNPmediumpowertransistorseriesencapsulatedinanultrathinDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapabilityandvisibleandsolderablesidepads. Featuresandbenefits ■HighcollectorcurrentcapabilityIC

CA

型号：BC53PAS-Q；Package：DFN2020D-3；80 V, 1 A PNP medium power transistors

1.Generaldescription PNPmediumpowertransistorseriesencapsulatedinanultrathinDFN2020D-3(SOT1061D) leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapabilityand visibleandsolderablesidepads. 2.Featuresandbenefits •Highcollectorcurrentcapa

CA

型号：BCX68；Package：SOT-89；NPN Silicon AF Transistors

NPNSiliconAFTransistors •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytype:BCX69(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101