80 V, 1 A PNP medium power transistor

PNP medium power transistor in a SOT1061 leadless very small Surface-Mounted Device (SMD) plastic package. NPN complement: BC56PA. • High current\n• Three current gain selections\n• High power dissipation capability\n• Exposed heatsink for excellent thermal and electrical conductivity\n• Leadless very small SMD plastic package with medium power capability\n• AEC-Q101 qualified;

Nexperia

安世

45 V/60 V/80 V, 1 A PNP medium power transistors

PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads.\nTable 1. Product overview Type number[1]\n Package\n NPN complement\n BC5 • High collector current capability IC and ICM\n• Reduced Printed-Circuit Board (PCB) area requirements\n• Exposed heat sink for excellent thermal and electrical conductivity\n• AEC-Q101 qualified\n• Two current gain selections\n• Leadless very small SMD plastic package with medium power capability\;

Nexperia

安世

80 V, 1 A PNP medium power transistors

PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. • High collector current capability IC and ICM\n• Reduced Printed-Circuit Board (PCB) area requirements\n• Exposed heat sink for excellent thermal and electrical conductivity\n• Two current gain selections\n• Leadless very small SMD plastic package with medium power capability\n• Suitable for Automa;

Nexperia

安世

Package：3-PowerUDFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 80V 1A 3HUSON

Nexperia USA Inc.

Package：3-UDFN 裸露焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 80V 1A DFN2020D-3

Nexperia USA Inc.