| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
丝印：BQ；Package：HUSON3；45 V, 1 A PNP medium power transistors Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified 文件：1.06086 Mbytes 页数：22 Pages | NEXPERIA 安世 | NEXPERIA | ||
丝印：C5；Package：DFN2020D-3；45 V/60 V/80 V, 1 A PNP medium power transistors General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. Features and benefits ■ High collector current capability IC 文件：903.25 Kbytes 页数：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
丝印：C5；Package：SOT1061D；45 V, 1 A PNP medium power transistors Features and benefits • High collector current capability IC and ICM • Reduced Printed-Circuit Board (PCB) area requirements • Exposed heat sink for excellent thermal and electrical conductivity • Two current gain selections • Leadless very small SMD plastic package with medium power capabili 文件：261.329 Kbytes 页数：11 Pages | NEXPERIA 安世 | NEXPERIA | ||
45 V, 1 A PNP medium power transistors 1. General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. 2. Features and benefits • High collector current capa 文件：263.77 Kbytes 页数：11 Pages | NEXPERIA 安世 | NEXPERIA | ||
丝印：BR；Package：HUSON3；45 V, 1 A PNP medium power transistors Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified 文件：1.06086 Mbytes 页数：22 Pages | NEXPERIA 安世 | NEXPERIA | ||
丝印：C6；Package：SOT1061D；45 V, 1 A PNP medium power transistors Features and benefits • High collector current capability IC and ICM • Reduced Printed-Circuit Board (PCB) area requirements • Exposed heat sink for excellent thermal and electrical conductivity • Two current gain selections • Leadless very small SMD plastic package with medium power capabili 文件：261.329 Kbytes 页数：11 Pages | NEXPERIA 安世 | NEXPERIA | ||
丝印：C6；Package：DFN2020D-3；45 V/60 V/80 V, 1 A PNP medium power transistors General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. Features and benefits ■ High collector current capability IC 文件：903.25 Kbytes 页数：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
丝印：C6；Package：DFN2020D-3；45 V, 1 A PNP medium power transistors 1. General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. 2. Features and benefits • High collector current capa 文件：263.77 Kbytes 页数：11 Pages | NEXPERIA 安世 | NEXPERIA | ||
PNP Silicon Darlington Transistor PNP Silicon Darlington Transistor 文件：78.3 Kbytes 页数：1 Pages | SEMTECH_ELEC 先之科半导体 | SEMTECH_ELEC | ||
PNP Silicon Darlington Transistor (High current gain High collector current) PNP Silicon Darlington Transistor ● High current gain ● High collector current ● Complementary type: BC 517 (NPN) 文件：138.8 Kbytes 页数：4 Pages | SIEMENS 西门子 | SIEMENS |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-N+Darl
- 性质：
通用型 （Uni）
- 封装形式：
直插封装
- 极限工作电压：
40V
- 最大电流允许值：
0.4A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
BC875,MPS-A13-14,
- 最大耗散功率：
0.625W
- 放大倍数：
- 图片代号：
A-23
- vtest：
40
- htest：
999900
- atest：
0.4
- wtest：
0.625
产品属性
- 产品编号：
BC517
- 制造商：
onsemi
- 类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
- 包装：
散装
- 晶体管类型：
NPN - 达林顿
- 不同 Ib、Ic 时 Vce 饱和压降（最大值）：
1V @ 100µA，100mA
- 电流 - 集电极截止（最大值）：
500nA
- 不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）：
30000 @ 20mA，2V
- 频率 - 跃迁：
200MHz
- 工作温度：
-55°C ~ 150°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
TO-226-3，TO-92-3 长体
- 供应商器件封装：
TO-92（TO-226）
- 描述：
TRANS NPN DARL 30V 1A TO92
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi |
25+ |
TO-92(TO-226) |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
FAI |
24+ |
80 |
询价 | ||||
SIEMENS |
05+ |
原厂原装 |
17346 |
只做全新原装真实现货供应 |
询价 | ||
- |
24+ |
BGA |
1068 |
原装现货假一罚十 |
询价 | ||
恩XP |
16+ |
NA |
8800 |
诚信经营 |
询价 | ||
Fairchild |
16+ |
原厂封装 |
10000 |
全新原装正品,代理优势渠道供应,欢迎来电咨询 |
询价 | ||
PHI |
23+ |
TO-92 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
KEC |
18+ |
TO-92 |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
FSC |
25+ |
TO-92 |
30000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
FAIRCHILD/仙童 |
2026+ |
TO92 |
11752 |
只做原厂原装,认准宝芯创配单专家 |
询价 |
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