Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Superior cross modulation characteristics. • High gain; (PG = 28 dB typ. at f = 200 MHz) • Wide supply voltage range; Appli

文件：59.52 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

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UHF variable capacitance diode

DESCRIPTION The BB405B is a variable capacitance diode, fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) package. FEATURES • Excellent linearity • Matched to 3 • Hermetically sealed leaded glass SOD68 (DO-34) package

文件：30.69 Kbytes 页数：4 Pages

PHI

飞利浦

UHF variable capacitance diode

DESCRIPTION The BB405B is a variable capacitance diode, fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) package. FEATURES • Excellent linearity • Matched to 3 • Hermetically sealed leaded glass SOD68 (DO-34) package

文件：30.69 Kbytes 页数：4 Pages

PHI

飞利浦

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Superior cross modulation characteristics. • High gain; (PG = 28 dB typ. at f = 200 MHz) • Wide supply voltage range; Appli

文件：59.52 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Build in Biasing Circuit MOS FET IC\nUHF/VHF RF Amplifier •  Build in Biasing Circuit; To reduce using parts cost & PC board space.\n•  High gain;\n•  Wide supply voltage range; Applicable with 5V to 9V supply voltage.\n•  Provide mini mold packages; MPAK-4R(SOT-143 var.);

HITACHI

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