Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.

文件：48.1 Kbytes 页数：11 Pages

HitachiHitachi Semiconductor

日立日立公司

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4(SOT-1

文件：274.21 Kbytes 页数：8 Pages

RENESAS

瑞萨

Resistors

SPI-2 (Ultra2) and SPI-3 (Ultra3) compliant Each network contains LVD termination for up to 9 lines Superior high frequency performance Minimal stray capacitance and inductance Surface mountable with automatic pick and place equipment

文件：356.29 Kbytes 页数：2 Pages

TTELEC

Resistors

SPI-2 (Ultra2) and SPI-3 (Ultra3) compliant Each network contains LVD termination for up to 9 lines Superior high frequency performance Minimal stray capacitance and inductance Surface mountable with automatic pick and place equipment

文件：356.29 Kbytes 页数：2 Pages

TTELEC

Resistors

SPI-2 (Ultra2) and SPI-3 (Ultra3) compliant Each network contains LVD termination for up to 9 lines Superior high frequency performance Minimal stray capacitance and inductance Surface mountable with automatic pick and place equipment

文件：356.29 Kbytes 页数：2 Pages

TTELEC

Resistors

SPI-2 (Ultra2) and SPI-3 (Ultra3) compliant Each network contains LVD termination for up to 9 lines Superior high frequency performance Minimal stray capacitance and inductance Surface mountable with automatic pick and place equipment

文件：356.29 Kbytes 页数：2 Pages

TTELEC

Resistors

SPI-2 (Ultra2) and SPI-3 (Ultra3) compliant Each network contains LVD termination for up to 9 lines Superior high frequency performance Minimal stray capacitance and inductance Surface mountable with automatic pick and place equipment

文件：356.29 Kbytes 页数：2 Pages

TTELEC

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; CMPAK-4(SOT-

文件：62.37 Kbytes 页数：11 Pages

HitachiHitachi Semiconductor

日立日立公司

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4(SOT-1

文件：64.54 Kbytes 页数：11 Pages

HitachiHitachi Semiconductor

日立日立公司

28V / 4,3-32pF

Features High capacitance tuning range Guaranted matching tolerances in a set from diode to diode

文件：240.94 Kbytes 页数：3 Pages

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