Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; CMPAK-4(SOT-

文件：62.37 Kbytes 页数：11 Pages

HITACHIHitachi Semiconductor

日立日立公司

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

HITACHI

日立

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4(SOT-1

文件：64.54 Kbytes 页数：11 Pages

HITACHIHitachi Semiconductor

日立日立公司

BA/BC Series: 1.5 - 6.0 Watts Single and Dual Outputs

FEATURES • Input π Filter • Fully Regulated Outputs • Industry Standard Pinouts • 5, 12, 24, 28, and 48 VDC Inputs • Ripple and Noise Less Than 50mVpp • Input/Output Isolation

文件：45.83 Kbytes 页数：2 Pages

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COMMON MODE CHOKE

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