COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The BB1 Series is an N type small signal transistor and enables the reduction of component counts and downsizing of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic applianc

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Single Row Terminal Blocks Continued

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Single Phase AC Power Analyzer Datasheet

Single Phase AC Power Analyzer Datasheet The Tektronix PA1000 is a single-phase, single-channel power analysis solution that is optimized for fast, efficient, and accurate power consumption testing to international standards. Its compact size, DMM-like user-interface, graphical display, and power

文件：1.05475 Mbytes 页数：8 Pages

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Single Phase AC Power Analyzer Datasheet

Single Phase AC Power Analyzer Datasheet The Tektronix PA1000 is a single-phase, single-channel power analysis solution that is optimized for fast, efficient, and accurate power consumption testing to international standards. Its compact size, DMM-like user-interface, graphical display, and power

文件：1.05475 Mbytes 页数：8 Pages

TEKTRONIX

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Single Phase AC Power Analyzer Datasheet

Single Phase AC Power Analyzer Datasheet The Tektronix PA1000 is a single-phase, single-channel power analysis solution that is optimized for fast, efficient, and accurate power consumption testing to international standards. Its compact size, DMM-like user-interface, graphical display, and power

文件：1.05475 Mbytes 页数：8 Pages

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Four-channel, Multi-phase AC/DC Power Analyzer

Four-channel, Multi-phase AC/DC Power Analyzer The Tektronix PA3000 is a one to four channel power analyzer that is optimized for testing today’s single and multi-phase, high efficiency power conversion products and designs. Use it to quickly visualize, analyze, and document power efficiency, ene

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Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.

文件：48.21 Kbytes 页数：11 Pages

HitachiHitachi Semiconductor

日立日立公司

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; CMPAK-4(SOT-

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Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; CMPAK-4(SOT-

文件：273.13 Kbytes 页数：8 Pages

RENESAS

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Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4(SOT-1

文件：274.21 Kbytes 页数：8 Pages

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