BB1

Single Row Terminal Blocks Continued

TerminalBlocks-SingleRow CoverOptions-SingleRow

BB1

COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

on-chipresistorNPNsiliconepitaxialtransistorFormid-speedswitching TheBB1SeriesisanNtypesmallsignaltransistorandenablesthereductionofcomponentcountsanddownsizingofsetsduetoon-chipresistors.Thistransistorisespeciallyidealforuseinhouseholdelectronicapplianc

BB1

COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switching;

BB1000-EU

Single Phase AC Power Analyzer Datasheet

SinglePhaseACPowerAnalyzerDatasheet TheTektronixPA1000isasingle-phase,single-channelpoweranalysissolutionthatisoptimizedforfast,efficient,andaccuratepowerconsumptiontestingtointernationalstandards.Itscompactsize,DMM-likeuser-interface,graphicaldisplay,andpower

BB1000-NA

Single Phase AC Power Analyzer Datasheet

SinglePhaseACPowerAnalyzerDatasheet TheTektronixPA1000isasingle-phase,single-channelpoweranalysissolutionthatisoptimizedforfast,efficient,andaccuratepowerconsumptiontestingtointernationalstandards.Itscompactsize,DMM-likeuser-interface,graphicaldisplay,andpower

BB1000-UK

Single Phase AC Power Analyzer Datasheet

SinglePhaseACPowerAnalyzerDatasheet TheTektronixPA1000isasingle-phase,single-channelpoweranalysissolutionthatisoptimizedforfast,efficient,andaccuratepowerconsumptiontestingtointernationalstandards.Itscompactsize,DMM-likeuser-interface,graphicaldisplay,andpower

BB1000-UN

Four-channel, Multi-phase AC/DC Power Analyzer

Four-channel,Multi-phaseAC/DCPowerAnalyzer TheTektronixPA3000isaonetofourchannelpoweranalyzerthatisoptimizedfortestingtoday’ssingleandmulti-phase,highefficiencypowerconversionproductsanddesigns.Useittoquicklyvisualize,analyze,anddocumentpowerefficiency,ene

BB101C

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Provideminimoldpackages;CMPAK-4(SOT-

BB101C

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.

BB101CAU-TL-E

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Provideminimoldpackages;CMPAK-4(SOT-