BB101M

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.

BB101M

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Provideminimoldpackages;MPAK-4(SOT-1

BB101MAU-TL-E

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Provideminimoldpackages;MPAK-4(SOT-1

BBP-101

BandpassFilter

BBP-101+

BandpassFilter

BBS-101-G-A

MACHINEDBOARDSTACKINGSTRIPS

ETC

BC101

BA/BCSeries:1.5-6.0WattsSingleandDualOutputs

FEATURES •InputπFilter •FullyRegulatedOutputs •IndustryStandardPinouts •5,12,24,28,and48VDCInputs •RippleandNoiseLessThan50mVpp •Input/OutputIsolation

BCR101

NPNSiliconDigitalTransistor

•Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=100kΩ,R2=100kΩ)

BCR101F

NPNSiliconDigitalTransistor

•Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=100kΩ,R2=100kΩ)

BCR101T

NPNSiliconDigitalTransistor

•Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=100kΩ,R2=100kΩ)