BS170

N-Channel60-V(D-S)MOSFET

BS170

N-Channel60-V(D-S)MOSFET

BS170

N-ChannelEnhancementModeFieldEffectTransistor

Features ■HighdensitycelldesignforlowRDS(ON). ■Voltagecontrolledsmallsignalswitch. ■Ruggedandreliable. ■Highsaturationcurrentcapability.

BS170F

SOT23N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

BS170F

60VoltVDS

FEATURES *60VoltVDS *RDS(ON)=5Ω PARTMARKINGDETAIL–MV

BS170FTA

N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

FEATURES *60VoltVDS *RDS(ON)=5Ω PARTMARKINGDETAIL–MV

BS170FTA

N-Channel60-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •1200VESDProtection •ComplianttoRoHSDirective2002/95/EC BENEFITS •Low

BS170FTA

N-Channel60V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •1200VESDProtection •ComplianttoRoHSDirective2002/95/EC BENEFITS •L

BS170FTA

60VN-ChannelMosfet

Application ®Dictlogicevelinterface:TTLICMOS ®Divers:rays,solenoids,lamps,hammersdisplay, memories,transistors,tc. ®Batteryoperatedsystems ®Solid-staterelays

BS170G

SmallSignalMOSFETSmallSignalMOSFETSmallSignalMOSFET

GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingONSemiconductorsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.The