BS170

DMOSTransistors(N-Channel)

FEATURES ♦Highinputimpedance ♦High-speedswitching ♦Nominoritycarrierstoragetime ♦CMOSlogiccompatibleinput ♦Nothermalrunaway ♦Nosecondarybreakdown

BS170

SmallSignalMOSFETSmallSignalMOSFETSmallSignalMOSFET

GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingONSemiconductorsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.The

BS170

SmallSignalMOSFET500mA,60VoltsN?묬hannelTO??2(TO??26)

BS170

N-ChannelEnhancementModeFieldEffectTransistor

BS170

SIPMOSSmall-SignalTransistor(NchannelEnhancementmodeLogicLevel)

•Nchannel •Enhancementmode •LogicLevel •VGS(th)=0.8...2.0V

BS170

N-Channel60-V(D-S)MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

BS170

N-Channel60-V(D-S)MOSFET

BS170

N-Channel60-V(D-S)MOSFET

BS170

N-Channel60-V(D-S)MOSFET

BS170

N-ChannelEnhancementModeFieldEffectTransistor

Features ■HighdensitycelldesignforlowRDS(ON). ■Voltagecontrolledsmallsignalswitch. ■Ruggedandreliable. ■Highsaturationcurrentcapability.