SURFACE MOUNT SWITCHING DIODE ARRAY

Features  Fast Switching Speed  Low Forward Voltage: Maximum of 0.715V at 1mA  Fast Reverse Recovery: Maximum of 4ns  Low Capacitance: Maximum of 1.5pF  Low Leakage Current  Triple Isolated Fast Switching Diode Array  Ultra-Small Surface Mount Package  Thermally Efficient Copper Al

文件：585.29 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：KJP；Package：SOT563；SURFACE MOUNT SWITCHING DIODE ARRAY

Features  Fast Switching Speed  Low Forward Voltage: Maximum of 0.715V at 1mA  Fast Reverse Recovery: Maximum of 4ns  Low Capacitance: Maximum of 1.5pF  Low Leakage Current  Triple Isolated Fast Switching Diode Array  Ultra-Small Surface Mount Package  Thermally Efficient Copper Al

文件：585.29 Kbytes 页数：5 Pages

DIODES

美台半导体

High-speed switching diodes

General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Features ■ High switching speed: trr ≤ 4 ns ■ Low capacitance ■ Low leakage current ■ Reverse voltage: VR ≤ 100 V ■ Repetitive peak reverse voltage: VRRM ≤ 1

文件：150.73 Kbytes 页数：20 Pages

恩XP

Triple high-speed switching diodes

General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Features ■ High switching speed: trr ≤ 4 ns ■ Low capacitance ■ Low leakage current ■ Reverse voltage: VR ≤ 100 V ■ Repetitive peak reverse voltage: VRRM ≤ 1

文件：81.04 Kbytes 页数：12 Pages

恩XP

High-speed switching diodes

General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Features ■ High switching speed: trr ≤ 4 ns ■ Low capacitance ■ Low leakage current ■ Reverse voltage: VR ≤ 100 V ■ Repetitive peak reverse voltage: VRRM ≤ 1

文件：150.73 Kbytes 页数：20 Pages

恩XP

丝印：16；Package：TSSOP6；High-speed switching diode

1. General description High-speed switching diode, encapsulated in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 4 ns • Low capacitance • Low leakage current • Reverse voltage: VR ≤ 100 V • Repetitive peak

文件：213.26 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：16；Package：SC-88；High-speed switching diodes

Features and benefits  High switching speed: trr  4 ns  Low leakage current  Repetitive peak reverse voltage: VRRM  100 V  AEC-Q101 qualified  Low capacitance  Reverse voltage: VR  100 V  Small SMD plastic packages

文件：773.33 Kbytes 页数：21 Pages

NEXPERIA

安世

High-speed switching diodes

General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages Applications  High-speed switching  General-purpose switching

文件：773.63 Kbytes 页数：21 Pages

NEXPERIA

安世

丝印：16；Package：TSSOP6；High-speed switching diode

1. General description High-speed switching diode, encapsulated in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 4 ns • Low capacitance • Low leakage current • Reverse voltage: VR ≤ 100 V • Repetitive peak

文件：220.7 Kbytes 页数：11 Pages

NEXPERIA

安世

Silicon Switching Diode

Silicon Switching Diode • For high-speed switching applications • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

文件：517.45 Kbytes 页数：10 Pages

Infineon

英飞凌