丝印：B84；Package：SOT-23；P-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS -60 V ● ID -0.17 A ● RDS(ON)( at VGS=-10V)

文件：545 Kbytes 页数：5 Pages

YANGJIE

扬杰电子

丝印：B84；Package：SOT-23；MOSFET(P-Channel)

Features Energy Efficient Low Threshold Voltage High-speed Switching. DC/DC Converter.

文件：1.15892 Mbytes 页数：3 Pages

SY

顺烨电子

丝印：B84；Package：SOT-23；Plastic-Encapsulate MOSFETS

DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. FEATURE Energy Efficient Low Threshold Voltage High-speed Switching Miniature Surface Mount Package Saves Board Space APPLICATI

文件：804.13 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

丝印：B84；Package：SOT-23；P-Channel Mosfet

Application « Battery protection « Load switch « Power management

文件：1.43068 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：B84；Package：SOT-23；Low-Power, Current Feedback OPERATIONAL AMPLIFIER With Disable

FEATURES MINIMAL BANDWIDTH CHANGE VERSUS GAIN > 120MHz BANDWIDTH TO GAIN > +10 LOW DISTORTION:

文件：883.06 Kbytes 页数：34 Pages

TI

德州仪器

丝印：B84；Package：SOT-23；Low-Power, Current Feedback OPERATIONAL AMPLIFIER With Disable

FEATURES MINIMAL BANDWIDTH CHANGE VERSUS GAIN > 120MHz BANDWIDTH TO GAIN > +10 LOW DISTORTION:

文件：883.06 Kbytes 页数：34 Pages

TI

德州仪器

丝印：B84；Package：SOT-23；Low-Power, Current Feedback OPERATIONAL AMPLIFIER With Disable

FEATURES MINIMAL BANDWIDTH CHANGE VERSUS GAIN > 120MHz BANDWIDTH TO GAIN > +10 LOW DISTORTION:

文件：883.06 Kbytes 页数：34 Pages

TI

德州仪器

丝印：B84；Package：SOT-23；Low-Power, Current Feedback OPERATIONAL AMPLIFIER With Disable

FEATURES MINIMAL BANDWIDTH CHANGE VERSUS GAIN > 120MHz BANDWIDTH TO GAIN > +10 LOW DISTORTION:

文件：883.06 Kbytes 页数：34 Pages

TI

德州仪器

丝印：B84；Package：SOT23；P-Channel Enhancement Mosfet

Feature -60V,-170mA Ros on,

文件：875.07 Kbytes 页数：5 Pages

RECTRON

丽正国际

丝印：B84.；Package：SOT-23；P-Channel MOSFET

Features - VDS(V) = -50V - ID = -130mA - RDS(ON)

文件：498.01 Kbytes 页数：5 Pages

COMCHIP

典琦