AUIRS2123

Floatingchanneldesignedforbootstrapoperation

AUIRS2123S

AutomotiveGrade

AUIRS2123S

HighVoltageICsHIGHSIDEDRIVERIC

DMP2123L

P-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowRDS(ON) ◾72mΩ@VGS=-4.5V ◾108mΩ@VGS=-2.7V ◾123mΩ@VGS=-2.5V •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighRelia

DMP2123L

P-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowRDS(ON): •72mΩ@VGS=-4.5V •108mΩ@VGS=-2.7V •123mΩ@VGS=-2.5V •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability •GreenDevice(Note4)

DMP2123L

P-ChannelMosfet

Application «+Load/PowerSwitching «InterfacingSwitching *LogicLevelShift

DMP2123LQ

P-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowRDS(ON) -72mΩ@VGS=-4.5V -108mΩ@VGS=-2.7V -123mΩ@VGS=-2.5V •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliabil

DMP2123LQ

-20VP-ChannelEnhancementModeMOSFET

Description toprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. TheusesadvancedtrenchtechnologyDMP2123LQ GeneralFeatures VDS=-20VID =-2.3A RDS(ON)

E2123S

3C207/28BCFLEXOASFLEXSound,Alarm&SecurityCable

ECQB2123MF

PlasticFilmCapacitors