CEH2305

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-4.9A,RDS(ON)=52mW@VGS=-10V. RDS(ON)=65mW@VGS=-4.5V. RDS(ON)=119mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant.

CEH2305A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-4.9A,RDS(ON)=52mW@VGS=-10V. RDS(ON)=60mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant. RDS(ON)=85mW@VGS=-2.5V.

CES2305

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-4A,RDS(ON)=55mΩ@VGS=-10V. RDS(ON)=70mΩ@VGS=-4.5V. RDS(ON)=120mΩ@VGS=-2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CES2305

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-4A,RDS(ON)=55mW@VGS=-10V. RDS(ON)=70mW@VGS=-4.5V. RDS(ON)=120mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant.

CES2305A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-4A,RDS(ON)=52mW@VGS=-10V. RDS(ON)=60mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant. RDS(ON)=85mW@VGS=-2.5V.

CHM2305PT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT4Ampere FEATURE *Smallflatpackage.(SC-59) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CIT2305

SelfDrivePiezoTransducer(AC)

CJ2305

SOT-23Plastic-EncapsulateMOSFETS

CJ2305

P-ChannelMOSFET

CJK2305

P-Channel12-V(D-S)MOSFET