P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -4A, RDS(ON) = 55mΩ @VGS = -10V. RDS(ON) = 70mΩ @VGS = -4.5V. RDS(ON) = 120mΩ @VGS = -2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -4A, RDS(ON) = 55mW @VGS = -10V. RDS(ON) = 70mW @VGS = -4.5V. RDS(ON) = 120mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. RoHS compliant.

文件：530.84 Kbytes 页数：4 Pages

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P Channel MOSFET

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -4A, RDS(ON) = 52mW @VGS = -10V. RDS(ON) = 60mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. RoHS compliant. RDS(ON) = 85mW @VGS = -2.5V.

文件：424.9 Kbytes 页数：5 Pages

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P Channel MOSFET

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P Channel Product

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