| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally 文件:63.81 Kbytes 页数:2 Pages | ADPOW | ADPOW | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon 文件:61.36 Kbytes 页数:2 Pages | ADPOW | ADPOW | ||
POWER MOS 7 MOSFET POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon 文件:109.1 Kbytes 页数:5 Pages | ADPOW | ADPOW | ||
POWER MOS 7 MOSFET POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon 文件:109.1 Kbytes 页数:5 Pages | ADPOW | ADPOW | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally 文件:63.81 Kbytes 页数:2 Pages | ADPOW | ADPOW | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon 文件:61.36 Kbytes 页数:2 Pages | ADPOW | ADPOW | ||
POWER MOS 7 MOSFET POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon 文件:109.1 Kbytes 页数:5 Pages | ADPOW | ADPOW | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • 文件:63.68 Kbytes 页数:4 Pages | ADPOW | ADPOW | ||
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. POWER MOS VI™ Power MOS VI™ is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers 文件:35.76 Kbytes 页数:2 Pages | ADPOW | ADPOW | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switchi 文件:60.2 Kbytes 页数:4 Pages | ADPOW | ADPOW |
详细参数
- 型号:
APT50
- 制造商:
MICROSEMI
- 制造商全称:
Microsemi Corporation
- 功能描述:
POWER MOS 7 R MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
APT |
24+ |
8866 |
询价 | ||||
APT |
22+ |
原厂原封 |
8200 |
原装现货库存.价格优势!! |
询价 | ||
APTMICROSEMI |
22+ |
264MAXL2 |
6000 |
十年配单,只做原装 |
询价 | ||
APT |
22+ |
TO-3PL |
8000 |
原装正品支持实单 |
询价 | ||
APTMICROSEMI |
23+ |
264MAXL2 |
8400 |
专注配单,只做原装进口现货 |
询价 | ||
APT |
24+/25+ |
21 |
原装正品现货库存价优 |
询价 | |||
24+ |
N/A |
70000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
APT |
24+ |
模块 |
3500 |
原装现货,可开13%税票 |
询价 | ||
APT |
23+ |
模块 |
800 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
询价 | ||
100 |
原装现货,价格优惠 |
询价 |
相关规格书
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- APT50M50PVR
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- APT50M60JVFR
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相关库存
更多- APT50M50L2LLG
- APT50M60BFN
- APT50M60JNF
- APT50M60JVR
- APT50M60L2VFR_04
- APT50M60L2VR
- APT50M60L2VRG
- APT50M65B2FLL
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- APT50M65B2LL_04
- APT50M65JFLL
- APT50M65JLL
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- APT50M75B2FLL
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- APT50M75B2LL_04
- APT50M75JFLL
- APT50M75JLL
- APT50M75JLLU2
- APT50M75JLLU3
- APT50M75LFLLG
- APT50M75LLLG
- APT50M80B2LC
- APT50M80B2VFR_03
- APT50M80B2VR
- APT50M80B2VRG
- APT50M80LLC
- APT50M80LVFRG
- APT50M80LVRG
- APT50M85B2VFR_04
- APT50M85B2VR
- APT50M85B2VRG
- APT50M85JVR
- APT50M85LVFRG
- APT50M85LVRG
- APT50N60JCCU2
- APT51F50J
- APT51M50J_09
- APT53N60BC6
- APT54GA60B
- APT54GA60S
- APT55-101DN
- APT5510JFLL
- APT5513B2FLL

