isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.25Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

文件：344.38 Kbytes 页数：2 Pages

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无锡固电

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

文件：344.76 Kbytes 页数：2 Pages

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无锡固电

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

文件：311.27 Kbytes 页数：2 Pages

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无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 21A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

POWWE MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. • Faster Switching • Lower Leakage • 100 Avalanche Tested • Popular TO-247 Package

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isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

文件：344.73 Kbytes 页数：2 Pages

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无锡固电

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

POWWE MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. • Faster Switching • Lower Leakage • 100 Avalanche Tested • Popular TO-247 Package

文件：96.09 Kbytes 页数：2 Pages

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