APT50M80LVFR数据手册库存现货无锡固电-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
APT50M80LVFR	文件：97.37 Kbytes Page：4 Pages	POWER MOS V 文件：97.37 Kbytes 页数：4 Pages	ADPOW	ADPOW
APT50M80LVFR	文件：299.96 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor 文件：299.96 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
APT50M80LVFRG	文件：300 bytes Page：1 Pages	FREDFETs ROHS	Microchip 微芯科技	Microchip
APT50M80LVR	文件：38.12 Kbytes Page：2 Pages	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Iden 文件：38.12 Kbytes 页数：2 Pages	ADPOW	ADPOW
APT50M80LVR	文件：95.91 Kbytes Page：4 Pages	POWER MOS V 文件：95.91 Kbytes 页数：4 Pages	ADPOW	ADPOW
APT50M80LVR	文件：301.7 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current :ID= 58A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching 文件：301.7 Kbytes 页数：2 Pages	ISC 无锡固电	ISC

更多APT50M80LVFR供应商更新时间2026-4-21 10:38:00