APT50M85B2VR资料使用说明书贸易商无锡固电-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
APT50M85B2VR	文件：38.11 Kbytes Page：2 Pages	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Identical Specific 文件：38.11 Kbytes 页数：2 Pages	ADPOW	ADPOW
APT50M85B2VR	文件：337.45 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 56A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC 文件：337.45 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
APT50M85B2VR	文件：138.85 Kbytes Page：4 Pages	POWER MOS V MOSFET 文件：138.85 Kbytes 页数：4 Pages	ADPOW	ADPOW
APT50M85B2VR_04	文件：138.85 Kbytes Page：4 Pages	POWER MOS V MOSFET 文件：138.85 Kbytes 页数：4 Pages	ADPOW	ADPOW
APT50M85B2VR	文件：300 bytes Page：1 Pages	POWER MOS V 500V 56A 0.085 Ohm	APT 晶科	APT

型号：
APT50M85B2VR
制造商：
ADPOW
制造商全称：
Advanced Power Technology
功能描述：
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

更多APT50M85B2VR供应商更新时间2025-10-9 16:30:00