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APT50M85JVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

文件:75.91 Kbytes 页数:4 Pages

MICROSEMI

美高森美

APT50M85JVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

文件:76.66 Kbytes 页数:4 Pages

ADPOW

APT50M85JVFR

FREDFETs

ROHS

Microchip

微芯科技

APT50M85JVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

文件:74.28 Kbytes 页数:4 Pages

ADPOW

APT50M85JVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

文件:74.56 Kbytes 页数:4 Pages

MICROSEMI

美高森美

APT50M85LVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

文件:40.53 Kbytes 页数:2 Pages

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详细参数

  • 型号:

    APT50M85JVFR

  • 功能描述:

    MOSFET N-CH 500V 50A SOT-227

  • RoHS:

  • 类别:

    半导体模块 >> FET

  • 系列:

    POWER MOS V®

  • 标准包装:

    10

  • 系列:

    *

供应商型号品牌批号封装库存备注价格
APT
23+
模块
120
全新原装正品,量大可订货!可开17%增值票!价格优势!
询价
APT
24+
模块
3500
原装现货,可开13%税票
询价
APT
22+
原厂原封
8200
原装现货库存.价格优势!!
询价
Microch
20+
NA
33560
原装优势主营型号-可开原型号增税票
询价
APT
24+
模块
6430
原装现货/欢迎来电咨询
询价
APT
22+
SOT227
8000
原装正品支持实单
询价
原厂
2023+
模块
600
专营模块,继电器,公司原装现货
询价
APT
2018
模块
300
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
询价
Microsemi
23+
标准封装
5000
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保
询价
APT
23+
MODULE
7300
专注配单,只做原装进口现货
询价
更多APT50M85JVFR供应商 更新时间2026-1-23 16:31:00