isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 57A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

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无锡固电

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Iden

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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Identical Specific

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Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS VI™ Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, deliver

文件：36.23 Kbytes 页数：2 Pages

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Identical Specific

文件：34.75 Kbytes 页数：2 Pages

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Iden

文件：38.12 Kbytes 页数：2 Pages

ADPOW

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 58A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.08Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

无锡固电

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS VI™ Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Cissand Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers

文件：35.9 Kbytes 页数：2 Pages

ADPOW

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS VI™ Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, deliver

文件：36.23 Kbytes 页数：2 Pages

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Iden

文件：38.12 Kbytes 页数：2 Pages

ADPOW