isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 21A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：297.01 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope with integrated damper diode intended intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional toleranc

文件：20.84 Kbytes 页数：4 Pages

PHI

PHI

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope with an integrated damper diode intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to b

文件：23.09 Kbytes 页数：4 Pages

PHI

PHI

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope with an integrated damper diode intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tole

文件：22.55 Kbytes 页数：4 Pages

PHI

PHI