Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 47A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.1Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

无锡固电

New T-MAX??Package (Clip-mounted TO-247 Package)

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New T-MAX??Package (Clip-mounted TO-247 Package)

文件：66.57 Kbytes 页数：4 Pages

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POWER MOS V 500V 47A 0.100 Ohm

APT

晶科

N-Channel MOSFET

Microchip

微芯科技