isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 4A@ TC=25℃ · Drain Source Voltage -VDSS= 1200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4.2Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, · Half Bridge · PFC and Other Boost Converter · Buck Converterh

文件：292.01 Kbytes 页数：2 Pages

ISC

无锡固电

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文件：188.75 Kbytes 页数：4 Pages

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1200V, 4A, 4.2廓 Max Trr ??95nS

文件：204.45 Kbytes 页数：4 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.2Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：332.39 Kbytes 页数：2 Pages

ISC

无锡固电