Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

文件：64.36 Kbytes 页数：4 Pages

ADPOW

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 28A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.14Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：337.01 Kbytes 页数：2 Pages

ISC

无锡固电

POWER MOS V 400V 28A 0.140 Ohm

APT

晶科

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

文件：64.2 Kbytes 页数：4 Pages

ADPOW

POWER MOS V FREDFET

文件：73.91 Kbytes 页数：4 Pages

ADPOW

BROADBAND xDSL, HPN, CMCs

BROADBAND ACCESS: xDSL, HPN, CMCs Broadband has come a long way in the past few years. Pulse continues to lead the way with a broad range of components that enable twisted-pair copper, fiber and coaxial cable to deliver high-speed services to homes and businesses. Pulse components are also us

文件：121.35 Kbytes 页数：4 Pages

pulse