Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switchi

文件：64.53 Kbytes 页数：4 Pages

ADPOW

isc N-Channel MOSFET Transistor

FEATURES Drain Current : ID= 23A@ TC=25℃ Drain Source Voltage : VDSS= 400V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) @ VGS= 10V 100 avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC conv

文件：336.83 Kbytes 页数：2 Pages

ISC

无锡固电

POWER MOS V 400V 23A 0.200 Ohm

APT

晶科

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 23.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：327.24 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 23.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：297.32 Kbytes 页数：2 Pages

ISC

无锡固电

POWER MOS V FREDFET

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switchi

文件：74.27 Kbytes 页数：4 Pages

ADPOW