N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 400V 15.0A 0.300Ω • Faster Switching • Low Gate Charge • 100 Avalanche Tested • Popular TO-254 Package • Similar to the 2N7227, JX2N7227 and JV2N7227

文件：52.51 Kbytes 页数：4 Pages

ADPOW

POWER MOS IV 400V 15.0A 0.300 Ohm

APT

晶科电子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 350V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：332.18 Kbytes 页数：2 Pages

ISC

无锡固电

Wire Wound Magnetically Shielded SMD Power Inductor

FEATURES: • Shielded magnetics, low radiation • Large Terminal surface for good PCB bonding • Low DCR, High Energy storage, suitable for large currents • Ideal for a variety of DC-DC converter inductor applications APPLICATIONS: • Partable communication equipment • OA equipment • LCD, DVD,

文件：2.22092 Mbytes 页数：3 Pages

ABRACON

Molded SMD Power Inductor (AEC-Q200 Grade 0)

Features •PPAP ready and supported •TS16949 certified production lines •AEC-Q200 qualified (-55˚C ~ +150˚C) •Shielded construction •Soft saturation •Low DCR, High Efficiency Applications •Body electronics and comfort system •Infotainment and entertainment •Electric vehicles •Lighting

文件：697.17 Kbytes 页数：5 Pages

ABRACON