POWER MOS V FREDFET

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switchi

文件：74.27 Kbytes 页数：4 Pages

ADPOW

POWER MOS V FREDFET

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switchi

文件：74.27 Kbytes 页数：4 Pages

ADPOW

The AQ4020 components integrate low capacitance steering diodes with one or two avalanche breakdown diodes for unidirectional or bidirectional protection

文件：673.83 Kbytes 页数：5 Pages

LITTELFUSE

力特

Shielded Power Inductor

文件：1.52482 Mbytes 页数：3 Pages

ABRACON

Wire Wound Magnetically Shielded SMD Power Inductor

文件：2.12053 Mbytes 页数：3 Pages

ABRACON