isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 18.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

文件：345.52 Kbytes 页数：2 Pages

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无锡固电

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 18.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

文件：345.48 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 350V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：298 Kbytes 页数：2 Pages

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无锡固电

N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 400V 15.0A 0.300Ω • Faster Switching • Low Gate Charge • 100 Avalanche Tested • Popular TO-254 Package • Similar to the 2N7227, JX2N7227 and JV2N7227

文件：52.51 Kbytes 页数：4 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 350V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：332.18 Kbytes 页数：2 Pages

ISC

无锡固电