POWER MOS V FREDFET

POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

文件：74.69 Kbytes 页数：4 Pages

ADPOW

POWER MOS V FREDFET

APT

晶科电子

Dual 4-input NAND gate

DESCRIPTION The HEF4012B provides the positive dual 4-input NAND function. The outputs are fully buffered for highest noise immunity and pattern insensitivity of output impedance.

文件：25.24 Kbytes 页数：1 Pages

PHI

PHI

Dual 4-input NAND gate

DESCRIPTION The HEF4012B provides the positive dual 4-input NAND function. The outputs are fully buffered for highest noise immunity and pattern insensitivity of output impedance.

文件：25.24 Kbytes 页数：1 Pages

PHI

PHI

Dual 4-input NAND gate

DESCRIPTION The HEF4012B provides the positive dual 4-input NAND function. The outputs are fully buffered for highest noise immunity and pattern insensitivity of output impedance.

文件：25.24 Kbytes 页数：1 Pages

PHI

PHI