isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 18.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 350V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

文件：345.29 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 350V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：297.78 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 350V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：331.95 Kbytes 页数：2 Pages

ISC

无锡固电

Intel®Xeon® E3 / Core™ i3/i5/i7 LGA1151 Modular Expansion Fanless Box PC

Features ƒ Support Intel® Xeon® / 6th & 7th Gen. Core™ i3/i5/i7 processor ƒ Triple independent display: VGA + HDMI + Optional Display ƒ DDR4 SO-DIMM memory support up to 32 GB ƒ Option 9-36V power module compatible with all-in-one ordering ƒ Optional modular design for 2.5 hard drive bays: in

文件：928.51 Kbytes 页数：3 Pages

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